General

The DF2B12M4SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device

interfaces and other applications to protect against static electricity and noise.

Utilizing snapback characteristics, the DF2B12M4SL provides low dynamic resistance and superior protective

performance.

Furthermore, it is optimum the high speed signal application for the low capacitance performance. The

DF2B12M4SL is housed in an ultra-compact package (0.62 mm × 0.32 mm) to meet applications that require a

small footprint.

Applications

Mobile Equipment

 Smartphones

 Tablets

 Notebook PCs

Desktop PCs

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

特性 Features

(1) Suitable for use with a 10 V signal line. (VRWM ≤ 11 V)

(2) Protects devices with its high ESD performance.

(VESD = ±15 kV (Contact / Air) @IEC61000-4-2)

(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.

(RDYN = 0.65 Ω (typ.))

(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.

(VC = 17 V@IPP = 1 A (typ.))

(5) Compact package is suitable for use in high density board layouts such as in mobile devices.

(0.62 mm × 0.32 mm size (Nickname: SL2))