首頁 >DEF-299B>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P-Channel2.5VSpecifiedPowerTrenchBGAMOSFET GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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