描述 Description

The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.FeaturesWide-band DC-3.5 GHz general purpose driver applicationsIdeal for Pulsed Radar, Avionics, ISM, and CW Communication15 W Pulsed and CW Psat and 18 dB Power Gain @ 1.4 GHzLow-cost QFN package with excellent RF & Thermal performance50V Bias Operation with high breakdown voltage??ROHS, PB Free

簡介

DC35GN-15-Q4屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的DC35GN-15-Q4晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。