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型號：2SD1766P；Package：SOT-89；Medium Power Transistor

Features ? Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

文件：224.04 Kbytes 頁數(shù)：1 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

型號：2SD1766Q；Package：SOT-89；Medium Power Transistor

Features ? Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

文件：224.04 Kbytes 頁數(shù)：1 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

型號：2SD1766R；Package：SOT-89；Medium Power Transistor

Features ? Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

文件：224.04 Kbytes 頁數(shù)：1 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

型號：AP2121AJ4A-3.3TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 頁數(shù)：29 Pages

DIODESDiodes Incorporated

美臺半導(dǎo)體

型號：BAT46WH；Package：SOD123F；Single Schottky barrier diode

Features and benefits ? Low forward voltage ? Reverse voltage VR ? 100 V ? Small and flat lead SMD plastic package ? Low capacitance ? AEC-Q101 qualified

文件：892.59 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號：BAT46WH-Q；Package：SOD123F；Schottky barrier diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small and flat lead SOD123F Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Low forward voltage ? Reverse voltage VR ≤ 100 V ? Small and flat

文件：254.59 Kbytes 頁數(shù)：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號：BCW67B；Package：SOT-23；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

文件：1.06014 Mbytes 頁數(shù)：2 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

型號：BCW67B；Package：SOT-23；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

文件：157.71 Kbytes 頁數(shù)：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

型號：BD49E28；Package：SSOP5；Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：433.03 Kbytes 頁數(shù)：18 Pages

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

型號：BD49E28G；Package：SSOP5；Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：433.03 Kbytes 頁數(shù)：18 Pages

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)