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D501

Miniature Snap-in Power Rocker Switches

Features/Benefits ?Momentaryandmaintainedmodels ?PCandquickconnectterminals ?Recessedbracketavailable—prevents accidentalactuation ?RoHScompliant ?Goldplatedoptionsavailable

D5012UK

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum\n;

D5013UK

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Useful P(o) at 1 GHz\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum\n;

D5017

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY

2SD5017->CorrectPartnumber:3DD5017 3DD5017ishighbreakdownvoltageofNPNbipolartransistor.Themainprocessofmanufacture: highvoltagemesatypeprocess,triplediffusedprocessetc.,adoptionoffullyplasticpackge.RoHSproduct.

D5017

NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

*NPNTripleDiffusedPlanarSiliconTransistor *HighCollector-BaseVoltageVcbo=1500V

D5017

isc Silicon NPN Power Transistor

DESCRIPTION ·HighBreakdownVoltage-:VCBO=1500V(Min) ·HighSwitchingSpeed ·HighReliability APPLICATIONS ·DesignedforcolorTVhorizontaloutputapplicaitions

D5017UK

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Useful P(o) at 1 GHz\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum\n;

D5011

I.S. SIL3 2-Wire HART? Transmitter Power Supply

D5011D

I.S. SIL3 2-Wire HART? Transmitter Power Supply

D5011S

I.S. SIL3 2-Wire HART? Transmitter Power Supply