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D2010

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET20W–28V–1GHzSINGLEENDED FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?LOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–10dBMINIMUM APPLICATIONS ?VHF/UHFCOMMUNICATIO

D2010

Intrinsically Safe Analog-Temperature Multiplexer DIN-Rail Model D2010M

Generaldescription: D2000MseriesIntrinsicallySafeMultiplexingSystemconsistsofonetofour Analog-TemperatureMultiplexerunitsmodelD2010M,uptotwelveExpanderunits modelD2011M,oruptofourDigitalMultiplexerunitsmodelD2030M,mountedin HazardousArea/HazardousLocationsZon

D2010

電流反饋型相位控制電路; ·全波電流感應(yīng)\n·主電源可調(diào)\n·軟啟動\n·程控電流大小，防止過流及過高輸出\n·電壓與電流同步\n·自動觸發(fā)開關(guān)\n·內(nèi)部電壓監(jiān)控\n·電流要求：≤3mA\n·觸發(fā)脈沖典型值：125mA\n·溫度補償基準電壓\n·封裝形式：DIP16、SOP16;

D2010是一塊相位控制集成電路，采用雙級工藝。具有負載電流保護、軟啟動等功能。廣泛應(yīng)用于機床馬達的控制。\n

D2010M

Intrinsically Safe Analog-Temperature Multiplexer DIN-Rail Model D2010M

Generaldescription: D2000MseriesIntrinsicallySafeMultiplexingSystemconsistsofonetofour Analog-TemperatureMultiplexerunitsmodelD2010M,uptotwelveExpanderunits modelD2011M,oruptofourDigitalMultiplexerunitsmodelD2030M,mountedin HazardousArea/HazardousLocationsZon

D2010UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET20W–28V–1GHzSINGLEENDED FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?LOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–10dBMINIMUM APPLICATIONS ?VHF/UHFCOMMUNICATIO

D2010UK

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET; ?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum\n;

D2010UK

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET; ?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum\n;