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DSSK28-01AS

Marking：D2PAK；Package：TO-263；Schottky Barrier Rectifier

FEATURES ?WithTO-263packaging ?Highjunctiontemperaturecapability ?Lowforwardvoltagedrop ?Highcurrentcapability ?Lowpowerloss,highefficiency ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Switchingpowersupply ?Free-

EMD22

Marking：D22；Package：EMT6；General purpose (dual digital transistors)

Generalpurpose(dualdigitaltransistors) Features 1)BoththeDTA143ZchipandDTC143ZchipinanEMTorUMTpackage. 2)MountingpossiblewithEMT3orUMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareac

EMD28

Marking：D28；Package：EMT6；General purpose transistor (isolated transistors)

Features 1)DTr1:PNPdigitaltransistor DTr2:NPNdigitaltransistor 2)MountingpossiblewithEMT3automaticmountingmachines. Applications DC/DCconverter Motordriver

EMD29

Marking：D29；Package：EMT6；General purpose transistor (isolated transistors)

Features 1)BoththeDTB513ZchipandDTC114EchipinaEMTpackage. 2)MountingpossiblewithEMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DR

HUF75345S3ST

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

?DESCRIPTION ?DrainCurrent:ID=75A@TC=25℃ ?DrainSourceVoltage:VDSS=55V(Min) ?FastSwitchingSpeed ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Designedforhighcurrent,highspeedswitching,switchmodepowersupplies.

IDDD20G65C6

Marking：D2065C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC? 650V SiC Schottky Diode

Features ?Bestinclassforwardvoltage(1.25V) ?Bestinclassfigureofmerit(QcxVF) ?Highdv/dtruggedness(150V/ns) Benefits ?Systemefficiencyimprovement ?Systemcostandsizesavingsduetothereducedcoolingrequirements ?Enablinghigherfrequencyandincreasedpowerde

IDK20G120C5

Marking：D2012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/noforwardrecovery ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ?

IDW20G65C5

Marking：D2065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1Description ThinQ!?Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.Thankstothemorecompactdesignandthin-wafer technology,thenewfamilyofproductsshowsimprovedefficiencyoverallload conditions,resultingfromboththeimprovedtherm

IDWD20G120C5

Marking：D2012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features ?Noreverserecoverycurrent/noforwardrecovery ?Highsurgecurrentcapability ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Specifieddv/dtruggedness ?Pb-freeleadplating;RoHS

IDYH25G200C5

Marking：D2520C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC? Schottky diode 2000 V G5

Features ?VRRM=2000V ?IF=25A ?VF=1.5V ?Noreverserecoverycurrent/noforwardrecovery ?Highsurgecurrentcapability ?Temperatureindependentswitchingbehavior ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Specifieddv/d