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DTD123YS

Marking：D123YS；Package：SPT/SC-72；Digital transistors (built-in resistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallownegativebiasingoftheinput.Theyalsohavetheadvant

IDDD12G65C6

Marking：D1265C6；Package：PG-HDSOP-10-1；650V SiC Schottky Diode

Features ?Bestinclassforwardvoltage(1.25V) ?Bestinclassfigureofmerit(QcxVF) ?Highdv/dtruggedness(150V/ns) PotentialApplications ?PowerfactorcorrectioninSMPS ?Solarinverter ?Uninterruptiblepowersupply

PDTD123ES

Marking：D123ES；Package：SC-43A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTD123ES

Marking：D123ES；Package：SOT-54；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PDTD123YS

Marking：D123YS；Package：SC-43A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PJD12P06_L2_00001

Marking：D12P06；Package：TO-252AA；60V P-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@-10V,ID@-6A

PJD12P06-AU_L2_000A1

Marking：D12P06；Package：TO-252AA；60V P-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@-10V,ID@-6A

SD12C

Marking：D12C；Package：SOD-323；TVS ARRAY

350Wattspeakpulsepower(tp=8/20μs) Transientprotectionfordatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)24A(8/20μs) Smallpackageforuseinportableelectronics SuitablereplacementforMLV’sinESDprotect

SDT12S60

Marking：D12S60；Package：P-TO220-2-2；Silicon Carbide Schottky Diode

SiliconCarbideSchottkyDiode ?Worldsfirst600VSchottkydiode ?Revolutionarysemiconductor ??material-SiliconCarbide ?Switchingbehaviorbenchmark ?Noreverserecovery ?Notemperatureinfluenceon ??theswitchingbehavior ?Noforwardrecovery ?Pb-freeleadplating;RoHScom

STD12NF06LT4

Marking：D12NF06L；Package：DPAK；N-channel 60 V, 70 mΩ typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features Exceptionaldv/dtcapability 100avalanchetested Lowgatecharge Applications Switchingapplications Description ThisPowerMOSFETserieshasbeendevelopedusingSTMicroelectronics'unique STripFET?process,whichisspecificallydesignedtominimizeinputcapacitance andg