Functional Description

The CY7C1299A SRAM integrates 32,768 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors.

特性 Features

? Fast clock speed: 100 and 83 MHz

? Fast access times: 5.0/6.0 ns max.

? Single clock operation

? Single 3.3V –5 and +5 power supply VCC

? Separate VCCQ for output buffer

? Two chip enables for simple depth expansion

? Address, data input, CE1, CE2, PTX, PTY, WEX, WEY, and data output registers on-chip

? Concurrent Reads and Writes

? Two bidirectional data buses

? Can be configured as separate I/O

? Pass-through feature

? Asynchronous output enables (OEX, OEY)

? LVTTL-compatible I/O

? Self-timed Write

? Automatic power-down

? 176-pin TQFP package