Functional Description[1]

The CY7C1219F SRAM integrates 32,768 x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.

特性 Features

? Registered inputs and outputs for pipelined operation

? Optimal for performance (Double-Cycle deselect)

— Depth expansion without wait state

? 32K × 36-bit common I/O architecture

? 3.3V –5 and +10 core power supply (VDD)

? 3.3V I/O supply (VDDQ)

? Fast clock-to-output times

— 3.5 ns (for 166-MHz device)

— 4.0 ns (for 133-MHz device)

? Provide high-performance 3-1-1-1 access rate

? User-selectable burst counter supporting Intel? Pentium? interleaved or linear burst sequences

? Separate processor and controller address strobes

? Synchronous self-timed writes

? Asynchronous Output Enable

? JEDEC-standard 100-pin TQFP package and pinout

? “ZZ” Sleep Mode option