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EVB-EMC1053C

1CTripleTemperatureSensorwithResistanceErrorCorrectionandHotterofTwoZones

FCX1053A

SOT89NPNmediumpowertransistor

FCX1053A

NPNSILICONPOWER(SWITCHING)TRANSISTOR

Description ThismediumpowerNPNtransistor,offeredintheSOT89packageprovideshighcurrentandlowsaturationvoltagemakingitidealforuseinvariousdrivingandpowermanagementapplications. Features ?Extremelylowequivalenton-resistance;RCE(sat)=7.8m
Ωat4.5A ?3Ampscont

FCX1053A

NPNSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●10Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.21mvTyp. ●Extremelylowequivalenton-resistance.RCE(sat)78mΩat4.5A.

FCX1053A

SOT89NPNmediumpowertransistor

Features ?BVCEO>75V ?IC=3AhighContinuousCurrent ?ICM=10APeakPulseCurrent ?HighGainHoldsuphFE>300@IC=1A ?LowEquivalentOn-Resistance;RCE(sat)=78m?at4.5A ?ExcellenthFEcharacteristicsupto10A ?TotallyLead-Free&FullyRoHScompliant(Notes1&2)

FCX1053ATA

SOT89NPNmediumpowertransistor

FCX1053ATA

SOT89NPNmediumpowertransistor

Features ?BVCEO>75V ?IC=3AhighContinuousCurrent ?ICM=10APeakPulseCurrent ?HighGainHoldsuphFE>300@IC=1A ?LowEquivalentOn-Resistance;RCE(sat)=78m?at4.5A ?ExcellenthFEcharacteristicsupto10A ?TotallyLead-Free&FullyRoHScompliant(Notes1&2)

FZT1053

NPNSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

SOT223NPNSILICONPLANAR MEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *VCEO=75V *4.5AmpContinuousCurrent *10AmpPulseCurrent *LowSaturationVoltage *HighGain *ExtremelyLowEquivalentOn-resistance;RCE(sat)=78m?at4.5A

FZT1053A

NPNSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

SOT223NPNSILICONPLANAR MEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *VCEO=75V *4.5AmpContinuousCurrent *10AmpPulseCurrent *LowSaturationVoltage *HighGain *ExtremelyLowEquivalentOn-resistance;RCE(sat)=78m?at4.5A

FZT1053A

NPNSiliconPlanarMediumPowerHighGainTransistor

■Features ●CollectorCurrentCapabilityIC=4.5A ●CollectorEmitterVoltageVCEO=75V ●LowSaturationVoltage