首頁(yè) >CW1030AAAP>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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PowerAmplifierforPHS Description TheCXG1030NisapoweramplifierforPHS.ThisICisdesignedusingtheSony’sGaAsJ-FETprocessandoperatesatasinglepowersupply. Features ?Outputpower21dBm ?Positivepowersupply3.0V ?Lowcurrentconsumption170mA ?Highpowergain39dBTyp. ?Smallmoldpacka | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
SIL2Switch/ProximityDetectorRepeaterRelayOutputDIN-RailModelsD1030S,D1030D Features ??SIL2accordingtotoIEC61508:2010(Route2H)with Tproof=5/10years(≤10/>10oftotalSIF). ??SC2:SystematicCapabilitySIL2. ??InputfromZone0(Zone20),Division1, installationinZone2,Division2. ??NO/NCcontact/proximityDetectorInput. ??TwoSPDTRelayOutpu | GMI G.M. International | GMI | ||
Netz-GleichrichterdiodeRectifierDiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET400W-28V-175MHzPUSH-PULL | SEME-LAB Seme LAB | SEME-LAB | ||
LightingBusMappingCircuit | DEIAZ Device Engineering Incorporated | DEIAZ | ||
LightingBusMappingCircuit | DEIAZ Device Engineering Incorporated | DEIAZ | ||
REDLASERDIODE Features ?Shortwavelength:635nm(Typ.) ?Highoutputpower:5mWat60°C ?Lowthresholdcuttent:lth=25mA(Typ.) Applications ?Bar-codescanner ?Industrialequipment | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwi | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
Shieldedpowerinductors | EATONEaton All Rights Reserved. 伊頓伊頓公司 | EATON |
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