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F10C30

HighSurgeCapacity

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

FS10C30CT

10.0AmpereSurfaceMountDualCommonCathodeUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

S10C30

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

S10C30A

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

S10C30C

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

S10C30CE

SchottkyBarrierRectifiers

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheeling

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

S10C30D

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

S10C30PT

SCHOTTKYBARRIERRECTIFIER

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

SSR10C30

10A/300VSchottkySiliconCarbide

SSDI

Solid States Devices, Inc

U10C30

SwitchmodeDualUltrafastPowerRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

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