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MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinvert

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRB835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Gu

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

MBRD835

SCHOTTKYRECTIFIER

SMCSangdest Microelectronic (Nanjing) Co., Ltd

燒結(jié)金屬

MBRD835

SchottkyBarrierRectifier

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MBRD835

MBRD835SCHOTTKYRECTIFIER

Features 150℃TJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability “-A”isanAEC-Q101

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

MBRD835L

SWITCHMODE??PowerRectifirersDPAKSurfaceMountPackage

ThisSWITCHMODEpowerrectifierwhichusestheSchottkyBarrierprinciplewithaproprietarybarriermetal,isdesignedforuseasoutputrectifiers,freewheeling,protectionandsteeringdiodesinswitchingpowersupplies,invertersandotherinductiveswitchingcircuits.Thisstateoftheartd

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MBRD835L

8ALOWVFSCHOTTKYBARRIERRECTIFIER

Features ?GuardRingDieConstructionforTransientProtection ?LowPowerLoss,HighEfficiency ?HighSurgeCapability ?VeryLowForwardVoltageDrop ?ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications ?PlasticMaterial:ULFlammabilit

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

MBRD835L

SWITCHMODEPowerRectifier

Thisswitch?modepowerrectifierwhichusestheSchottkyBarrierprinciplewithaproprietarybarriermetal,isdesignedforuseasoutputrectifiers,freewheeling,protectionandsteeringdiodesinswitchingpowersupplies,invertersandotherinductiveswitchingcircuits. Features ?LowForwa

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRD835L

SWITCHMODEPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    CST-835S

  • 制造商:

    CHINASEMI

  • 制造商全稱:

    China Semiconductor Corporation

  • 功能描述:

    0.8 Inch Triad Digit Display

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CONVERT/鍇威特
24+
TO252-2
5000
原裝正品保障優(yōu)勢(shì)供應(yīng)
詢價(jià)
MURATA
24+
12800
詢價(jià)
MUR
23+
61500
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
Luminus
20000
詢價(jià)
更多CST-835S供應(yīng)商 更新時(shí)間2025-7-24 9:36:00