首頁 >CSP-209PP>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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LowCost,4:1InputMiniature,2WSIPDC/DCConverters KeyFeatures: ?2WOutputPower ?4:1InputVoltageRange ?1,500VDCIsolation ?ShortCircuitProtected ?MiniatureSIPCase ?Single&DualOutputs ?1.0MHMTBF ?IndustryStandardPin-Out ?LowLowCost!! | MPD MPD (Memory Protection Devices) | MPD | ||
D200ERUSERIES | MPD MPD (Memory Protection Devices) | MPD | ||
LowCost,Miniature2WSIP,WideInputDC/DCConverters KeyFeatures: ?2WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?ShortCircuitProtected ?MiniatureSIPCase ?Single&DualOutputs ?1.0MHMTBF ?IndustryStandardPin-Out ?LowLowCost!! | MPD MPD (Memory Protection Devices) | MPD | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
SiliconNPNPowerTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEo=400V(Min) ·HighSwitchingSpeed ·HighReliability ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters · | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
EpitaxialPlanarSiliconDiodeArrays Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
EpitaxialPlanarSiliconDiodeArrays Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
EpitaxialPlanarSiliconDiodeArrays Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
EpitaxialPlanarSiliconDiodeArrays Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching | ROHMRohm 羅姆羅姆半導體集團 | ROHM |
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