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D209ERU

LowCost,4:1InputMiniature,2WSIPDC/DCConverters

KeyFeatures: ?2WOutputPower ?4:1InputVoltageRange ?1,500VDCIsolation ?ShortCircuitProtected ?MiniatureSIPCase ?Single&DualOutputs ?1.0MHMTBF ?IndustryStandardPin-Out ?LowLowCost!!

MPD

MPD (Memory Protection Devices)

D209ERU

D200ERUSERIES

MPD

MPD (Memory Protection Devices)

D209ERW

LowCost,Miniature2WSIP,WideInputDC/DCConverters

KeyFeatures: ?2WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?ShortCircuitProtected ?MiniatureSIPCase ?Single&DualOutputs ?1.0MHMTBF ?IndustryStandardPin-Out ?LowLowCost!!

MPD

MPD (Memory Protection Devices)

D209L

HighVoltageFast-SwitchingNPNPowerTransistor

GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

D209L

SiliconNPNPowerTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

D209L

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEo=400V(Min) ·HighSwitchingSpeed ·HighReliability ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

DAN209

EpitaxialPlanarSiliconDiodeArrays

Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching

ROHMRohm

羅姆羅姆半導體集團

DAN209S

EpitaxialPlanarSiliconDiodeArrays

Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching

ROHMRohm

羅姆羅姆半導體集團

DAP209

EpitaxialPlanarSiliconDiodeArrays

Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching

ROHMRohm

羅姆羅姆半導體集團

DAP209S

EpitaxialPlanarSiliconDiodeArrays

Ultra-High-SpeedSwitching Features 1)Smallsize. 2)Highreliability 3)Highspeed(trr:1.5ns,Typ.). 4)Automaticassemblyfeasible. Applications Ultra-High-SpeedSwitching

ROHMRohm

羅姆羅姆半導體集團

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