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首頁 >CS3N20ATH-F>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
PHD3N20E	文件：298.09 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
PHD3N20E	文件：56.81 Kbytes Page：7 Pages	PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHD3N20L	文件：56.85 Kbytes Page：7 Pages	PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intend	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHD3N20L	文件：298.09 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
PHP3N20E	文件：52.86 Kbytes Page：7 Pages	PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSuppli	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHP3N20E	文件：371.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
PHP3N20L	文件：371.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
PHP3N20L	文件：53.79 Kbytes Page：7 Pages	PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePo	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
SSFP3N20	文件：203.09 Kbytes Page：2 Pages	StarMOSTPowerMOSFET	Good-Ark GOOD-ARK Electronics	Good-Ark

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