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F30N10G

N-ChannelEnhancementMOSFET

Features ?VDS=100V,ID=30A ?RDS(ON)=17mΩ@VGS=10V(Typ.) ?RDS(ON)=22mΩ@VGS=4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FIR30N10LG

100VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FTK30N10D

N-ChannelPowerMOSFET

FS

First Silicon Co., Ltd

HLDD30N10

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDD30N10

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HM30N10

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM30N10D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM30N10K

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

LMAK30N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

P30N10

N-channel100V,0.02廓typ.,32ASTripFET??F7PowerMOSFETinaTO-220package

Description ThisN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternal capacitanceandgatechargeforfasterandmore efficientswitching. Features ?AmongthelowestRDS(o

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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