首頁 >CS05N50ASH-F>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS500V RDSON(MAX.)1.85Ω ID5A UIS,100Tested Pb‐FreeLeadPlating | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS500V RDSON(MAX.)1.85Ω ID5A UIS,100Tested Pb‐FreeLeadPlating | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-CHANNELPOWERMOSFET | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC |
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