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DG722

1.8Vto5.5V,4ohmDualSPSTSwitches

DG722

1.8Vto5.5V,4??DualSPSTSwitches

FEATURES ?Halogen-freeaccordingtoIEC61249-2-21 definition ?1.8Vto5.5Vsinglepowersupply ?Lowandflatswitchonresistance,2.5?/typ. ?Lowleakageandparasiticcapacitance ?366MHz,-3dBbandwidth ?Latch-upcurrent>300mA(JESD78) ?Spacesavingpackages 2mmx2mm

DRA722

InfotainmentApplicationsProcessor

DRA722

InfotainmentApplicationsProcessorSiliconRevision2.0

FMMT722

SILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat)

FMMT722

SwitchingTransistor

Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat).

FMMT722

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features ?BVCEO>-12V ?IC=-2.5AContinuousCollectorCurrent ?ICM=-10APeakPulseCurrent ?LowSaturationVoltageE.g.-17mVMax@IC=-100mA. ?RCE(sat)=72m?at2.5Aforalowequivalenton-resistance ?625mWpowerdissipation ?hFEcharacterisedupto-10Aforhighcurrentgai

FMMT722

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

FMMT722TA

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

FMT722

SnaglessPre-Plugs