描述 Description

Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate

length fabrication process. GaN-on-SiC has superior properties

compared to silicon, gallium arsenide or GaN-on-Si, including higher

breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and

wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.

特性 Features

? 27 dB Small Signal Gain

? 30 W Typical PSAT

? Operation up to 40 V

? High Breakdown Voltage

? High Temperature Operation

Applications

? Satellite Communications Uplink