描述 Description

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.

特性 Features

? Both P-type and N-type low barrier silicon available
? Low 1/f noise
? Bonded junctions for reliability
? Planar passivated beam-lead and chip construction
? See also zero bias silicon schottky barrier detector diodes

應(yīng)用 Application

? Radar
? Instrumentation
? Space
? Surveillance Systems
? Electronic Warfare
? Military Communications
? Avionics