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CGHV40180P

180 W, DC - 2.0 GHz, 50 V, GaN HEMT

Description Cree’sCGHV40180Pisanunmatched,galliumnitride(GaN)high electronmobilitytransistor(HEMT).TheCGHV40180P,operating froma50voltrail,offersageneralpurpose,broadbandsolution toavarietyofRFandmicrowaveapplications.GaNHEMTs offerhighefficiency,highgain

CGHV40180P

180 W; DC - 2 GHz; GaN HEMT; ·Input Unmatched\n·180 W (CW) Minimum Pout\n·250 W Typical Pout\n·24 dB Typical Small Signal Gain\n·28 V and 50 V Operation\n;

The CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.

CGHV40180P

180 W, DC - 2000 MHz, 50 V, GaN HEMT

CGHV40180P

Package：440206；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：180W, GAN HEMT, 50V, DC-4.0GHZ,

CGHV40180P-AMP

180 W, DC - 2000 MHz, 50 V, GaN HEMT

CGHV40180P-TB

180 W, DC - 2000 MHz, 50 V, GaN HEMT