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CGHV14800F-AMP

800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems; ·910 W Typical Output Power\n·14 dB Power Gain\n·70% Typical Drain Efficiency\n·<0.3 dB Pulsed Amplitude Droop\n·Internally input and output matched\n;

The CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14800 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The package options are ceramic/metal flange (CGHV14800F) and pill package (CGHV14800P).\n\n

CGHV14800F-AMP

800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

CGHV14800F-AMP

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：CGHV14800F DEV BOARD WITH HEMT

CGHV14800-TB

800W,1200-1400MHz,50V,GaNHEMTforL-BandRadarSystems

ELM14800AA

DualN-Channel30-V(D-S)MOSFET

ELM14800AA-N

DualN-channelMOSFET

L-14800

HighSwingInductors

MAX14800

Low-ChargeInjection,16-Channel,High-VoltageAnalogSwitches

GeneralDescription TheMAX14800–MAX14803providehigh-voltageswitchingon16channelsforultrasonicimagingandprinterapplications.ThedevicesutilizeHVCMOSprocesstechnologytoprovide16high-voltagelowcharge-injectionSPSTswitches,controlledbyadigitalinterface.Dataisclocked

MAX14800

Low-ChargeInjection,16-Channel,High-VoltageAnalogSwitches

MAX14800CCM+

Low-ChargeInjection,16-Channel,High-VoltageAnalogSwitches