CGH60120D中文資料科銳數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
CGH60120D |
| 功能描述 | 120 W, 6.0 GHz, GaN HEMT Die |
| 文件大小 |
592.12 Kbytes |
| 頁(yè)面數(shù)量 |
7 頁(yè) |
| 生產(chǎn)廠商 | CREE |
| 中文名稱 | 科銳 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-10 17:00:00 |
| 人工找貨 | CGH60120D價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
CGH60120D規(guī)格書詳情
Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
? 13 dB Typical Small Signal Gain at 4 GHz
? 12 dB Typical Small Signal Gain at 6 GHz
? 120 W Typical PSAT
? 28 V Operation
? High Breakdown Voltage
? High Temperature Operation
? Up to 6 GHz Operation
? High Effciency
APPLICATIONS
? 2-Way Private Radio
? Broadband Amplifers
? Cellular Infrastructure
? Test Instrumentation
? Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CORNELLDUBILIER-CDE |
2020+ |
Bulk |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
CREE |
18+ |
SMD |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
CREE |
638 |
原裝正品 |
詢價(jià) | ||||
CREE/科銳 |
2447 |
20 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
CREE |
2023+ |
DQ |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | ||
CREE |
24+ |
SMD |
1680 |
一級(jí)代理原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
MACOM |
24+ |
5000 |
原裝軍類可排單 |
詢價(jià) | |||
CREE/科銳 |
23+ |
MOSFET |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
24+ |
N/A |
62000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Cree/Wolfspeed |
22+ |
Die |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) |
