CGH60120D中文資料WOLFSPEED數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
CGH60120D |
| 功能描述 | 120 W, 6.0 GHz, GaN HEMT Die |
| 文件大小 |
1.05102 Mbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠商 | WOLFSPEED |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-10 11:10:00 |
| 人工找貨 | CGH60120D價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
CGH60120D規(guī)格書(shū)詳情
描述 Description
Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron drift
velocity, and higher thermal conductivity. GaN HEMTs offer greater power
density and wider bandwidths compared to Si and GaAs transistors.
Large Signal Models Available for ADS and MWO
特性 Features
? 13 dB Typical Small Signal Gain at 4 GHz
? 12 dB Typical Small Signal Gain at 6 GHz
? 120 W Typical PSAT
? 28 V Operation
? High Breakdown Voltage
? High Temperature Operation
? Up to 6 GHz Operation
? High Efficiency
Applications
? 2-Way Private Radio
? Broadband Amplifiers
? Cellular Infrastructure
? Test Instrumentation
? Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, LTE, EDGE, CDMA waveforms
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CREE/科銳 |
23+ |
MOSFET |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
24+ |
N/A |
62000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
CREE/科銳 |
2447 |
20 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
CORNELLDUBILIER-CDE |
2020+ |
Bulk |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
Cree/Wolfspeed |
22+ |
Die |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
MACOM |
24+ |
5000 |
原裝軍類可排單 |
詢價(jià) | |||
CREE |
2023+ |
DQ |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | ||
CREE |
24+ |
SMD |
1680 |
一級(jí)代理原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CREE |
638 |
原裝正品 |
詢價(jià) | ||||
CREE |
24+ |
N/A |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) |
