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CG2H40010F

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’sCG2H40010isanunmatched,galliumnitride(GaN)highelectronmobilitytransistor(HEMT).TheCG2H40010,operatingfroma28voltrail,offersageneralpurpose,broadbandsolutiontoavarietyofRFandmicrowaveapplications.GaNHEMTsofferhigheffciency,highgainandwidebandwidthc

CG2H40010F

10-W RF Power GaN HEMT; ? Up to 8 GHz Operation\n? 18 dB Small Signal Gain at 2.0 GHz\n? 16 dB Small Signal Gain at 4.0 GHz\n? 17 W typical PSAT\n? 70% Efficiency at PSAT\n? 28 V Operation\n;

Up to 8 GHz Operation18 dB Small Signal Gain at 2.0 GHz16 dB Small Signal Gain at 4.0 GHz17 W typical PSAT70% Efficiency at PSAT28 V Operation

CG2H40010F

Package：440166；包裝：散裝 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 28V 440166

CG2H40010F-AMP

10-W RF Power GaN HEMT; ? Up to 8 GHz Operation\n? 18 dB Small Signal Gain at 2.0 GHz\n? 16 dB Small Signal Gain at 4.0 GHz\n? 17 W typical PSAT\n? 70% Efficiency at PSAT\n? 28 V Operation\n;

Up to 8 GHz Operation18 dB Small Signal Gain at 2.0 GHz16 dB Small Signal Gain at 4.0 GHz17 W typical PSAT70% Efficiency at PSAT28 V Operation

CG2H40010F-AMP

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：CG2H40010F DEV BOARD WITH HEMT

CG2H40010P

10W,DC-6GHz,RFPowerGaNHEMT

Cree’sCG2H40010isanunmatched,galliumnitride(GaN)highelectronmobilitytransistor(HEMT).TheCG2H40010,operatingfroma28voltrail,offersageneralpurpose,broadbandsolutiontoavarietyofRFandmicrowaveapplications.GaNHEMTsofferhigheffciency,highgainandwidebandwidthc