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FQD12P10

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

FQD12P10

P-ChannelMOSFET

■Features ●VDS(V)=-100V ●ID=-9.4A(VGS=-10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FQD12P10TM

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD12P10TM

P-channelEnhancementModePowerMOSFET

Features ?VDS=-100V,ID=-13A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQI12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU12P10

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G12P10K

P-ChannelEnhancementModePowerMOSFET

Description TheG12P10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

技術(shù)參數(shù)

  • BVDSS(V):

    -100/

  • Rds(on)mΩ@10V:

    315/

  • ID(A):

    -11/

  • Qg(nC)@10V(typ):

    15.6/

  • RθJC(℃/W):

    2

  • Pd(W):

    75

  • Configuration:

    Single

  • Polarity:

    P

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TO-220
1215+
TO-220
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
詢價(jià)
CET
23+
TO220/3
5500
現(xiàn)貨,全新原裝
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CET
24+
TO2203
66
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SR
23+
TO-220
5000
原裝正品,假一罰十
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CET
20+
TO-220
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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CET
2022+
20
全新原裝 貨期兩周
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CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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CET(華瑞)
2447
TO-220(TO-220-3)
105000
50個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
詢價(jià)
CET/華瑞
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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更多CEP12P10供應(yīng)商 更新時(shí)間2025-7-28 11:04:00