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CEM8958

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ●30V,5.3A,RDS(ON)=35mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. -30V,-4.0A,RDS(ON)=65mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandin

CEM8958

P-Chanel and N-Channel MOSFET use advanced trench technology

CEM8958

N+P Power MOSFET;

CEM8958A

Dual Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.8A,RDS(ON)=28m?@VGS=10V. RDS(ON)=42m?@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58m?@VGS=-10V. RDS(ON)=85m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CEM8958A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM8958B

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM8958B

Dual N & P MOSFET;