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CEB21A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB21A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM21A2PAPT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEB21A2

  • 功能描述：

    20V N Channel MOS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET/華瑞
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
C
23+
T0-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
01+
TO-263
1000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
CET/華瑞
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
CET/華瑞
24+
NA/
49600
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢價(jià)
CET
23+
TO-263
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多CEB21A2供應(yīng)商 更新時(shí)間2025-7-22 15:36:00

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