首頁 >CDBC3100-G整流器件>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
LowVFLowIRSMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierDiode Forwardcurrent:3.0A Reversevoltage:20to100V RoHSDevice HalogenFree Features -Leadlesschipform,noleaddamage. -Lowpowerloss,Highefficiency. -Highcurrentcapability,lowVF -PlasticpackagehasUL94V-0. MechanicalData -Case:PackedwithFRPsubstrateandepoxyunde | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
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