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CEB4060AR

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ?60V,15A,RDS(ON)=85mΩ@VGS=10V. ?SuperhighdensecelldesignforextremelylowRDS(ON) ?Highpowerandcurrenthandlingcapability. ?TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=90m?@VGS=10V. RDS(ON)=100m?@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=80m?@VGS=10V. RDS(ON)=95m?@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75m?@VGS=10V. RDS(ON)=90m?@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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更多CD4060BCJ供應(yīng)商 更新時間2025-7-29 10:50:00

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