描述 Description

The A32 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability.

This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is used for DC power supply decoupling.

Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

特性 Features

● LOW NOISE FIGURE: 3.5 dB (TYP.)

● HIGH THIRD ORDER IP: +32 dBm (TYP.)

● HIGH OUTPUT LEVEL: +21 dBm (TYP.)

● LOW VSWR: 1.8:1 (TYP.)