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C5

型號：10BJ5.0CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

C5

型號：10SMBJ5.0CA；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

C5

型號：2PB709ART；Package：SOT23；45 V, 100 mA PNP general-purpose transistor

Features *General-purposetransistor *SmallSMDplasticpackage

C5

型號：74AHC1G4208GW-Q100；Package：TSSOP5；8-stage divider and oscillator

1.Generaldescription 74AHC1G4208-Q100isa8-stagedividerandoscillator.Itconsistsofachainof8flip-flops. Eachflip-flopdividesthefrequencyofthepreviousflip-flopbytwo,consequentlythe 74AHC1G4208-Q100countsupto28=256.Thesingleinvertingstage(X1toX2)functionsas

C5

型號：AP2125KS-2.5TRG1；Package：SC-70-5；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

C5

型號：BAT54XY；Package：TSSOP6；Schottky barrier quadruple diode

1.Generaldescription Schottkybarrierquadruplediodewithanintegratedguardringforstressprotection.Twoelectrically isolateddualSchottkybarrierdiodesseries,encapsulatedinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lo

C5

型號：BC51-10PAS；Package：SOT1061D；45 V, 1 A PNP medium power transistors

Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?ReducedPrinted-CircuitBoard(PCB)arearequirements ?Exposedheatsinkforexcellentthermalandelectricalconductivity ?Twocurrentgainselections ?LeadlessverysmallSMDplasticpackagewithmediumpowercapabili

C5

型號：BC51-10PAS；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC

C5

型號：BC807-40LW；Package：TO-236AB；45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?AEC-Q101qualified

C5

型號：BCX51T；Package：SC-62；45 V, 1 A PNP power bipolar transistors

Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?AEC-Q101qualified