描述 Description

100 W GaN packaged Doherty power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.

特性 Features

? Excellent digital pre-distortion capability
? High efficiency
? Designed for broadband operation
? Lower output capacitance for improved performance in Doherty applications
? Internally matched for ease of use
? For RoHS compliance see the product details on the Ampleon website

應(yīng)用 Application

? RF power amplifier for base stations and multi carrier applications in the 2300 MHz to 2700 MHz frequency range

簡介

C4H2327N110A屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的C4H2327N110A晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。