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C11

型號：10BJ11CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

C11

型號：10SMBJ11CA；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

C11

型號：RGTV60TS65；Package：TO-247N；650V 30A Field Stop Trench IGBT

C11

型號：RGTV60TS65D；Package：TO-247N；650V 30A Field Stop Trench IGBT

C11

型號：RGTVX6TS65；Package：TO-247N；650V 80A Field Stop Trench IGBT

C11

型號：SCT3022AL；Package：TO-247N；N-channel SiC power MOSFET

C11

型號：SCT3022KL；Package：TO-247N；N-channel SiC power MOSFET

C110

型號：10SMBJ110CA；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

C1162

型號：2SC1162；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES LowFrequencyPowerAmplifier

C1162

型號：2SC1162-TU；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES LowFrequencyPowerAmplifier