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C01

型號：CG2430X1；Package：TSON；0.1 to 6.0GHz SP3T Switch

CEL

California Eastern Labs

C010

型號：BCM847QAS；Package：DFN1010B-6；45 V, 100 mA NPN/NPN matched double transistors

Featuresandbenefits ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.37mm ?Currentgainmatching ?Base-emittervoltagematching ?Application-optimizedpinout ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

C011

型號：BCM857QAS；Package：DFN1010B-6；45 V, 100 mA PNP/PNP matched double transistors

Featuresandbenefits ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.37mm ?Currentgainmatching ?Base-emittervoltagematching ?Application-optimizedpinout ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

C011B

型號：TTC011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?PowerAmplifiers ?Audio-FrequencyAmplifiers Features (1)Highcollectorvoltage:VCEO=230V(min) (2)Smallcollectoroutputcapacitance:Cob=20pF(typ.) (3)Hightransitionfrequency:fT=100MHz(typ.) (4)ComplementarytoTTA006B

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

C014

型號：TTC014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ?High-SpeedHigh-VoltageSwitching ?SwitchingVoltageRegulators ?High-SpeedDC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(IC=0.1A) (2)Highcollectorbreakdownvoltage:VCEO=800V,VCBO=900V (3)High-speedswitching:tr=0.2μs(typ.),

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

C015B

型號：TTC015B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?PowerAmplifiers ?PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A) (4)ComplementarytoTTA008B

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

C016

型號：TTC016；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=400to1000(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.22V(max)(IC=1.6A,IB=32mA) (3)High-speedswitching:tf=95ns(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

C017

型號：TTC017；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?PowerAmplifiers ?PowerSwitching Features (1)HighDCcurrentgain:hFE=180to450(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

C010N

型號：DC010NG；Package：TO-252；N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

C010N

型號：SC010NG；Package：SOP-8；N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CEL
2447
TSON-8(1.5x1.5)
315000
nan一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單
 詢價(jià)
CEL
20+
DFN-8
5255
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
CEL
22+
NA
1000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
CEL
22+
8TSON
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
CEL
23+
8TSON
9000
原裝正品，支持實(shí)單
 詢價(jià)
24+
N/A
51000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
CEL
23+
TO-18
12800
原裝正品代理商最優(yōu)惠價(jià)格,現(xiàn)貨或訂貨
 詢價(jià)
富士通
23+
TQFP
7000
絕對全新原裝!現(xiàn)貨!特價(jià)!請放心訂購!
 詢價(jià)
24+
QFP
78
詢價(jià)
FUJI
16+
TQFP
607
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢!
 詢價(jià)
更多C01供應(yīng)商 更新時(shí)間2025-7-28 15:01:00

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