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SN74LVC3G07DCUTG4

Marking：C07R；Package：VSSOP；Triple Buffer/Driver With Open-drain Outputs

1FEATURES 2?AvailableintheTexasInstrumentsNanoFree? Package ?Supports5-VVCCOperation ?Maxtpdof3.7nsat3.3V ?LowPowerConsumption,10-μAMaxICC?±24-mAOutputDriveat3.3V ?InputandOpen-DrainOutputAccepts Voltagesupto5.5V ?TypicalVOLP(OutputGroundBounce

SN74LVC3G07DCUTG4.B

Marking：C07R；Package：VSSOP；Triple Buffer/Driver With Open-drain Outputs

1FEATURES 2?AvailableintheTexasInstrumentsNanoFree? Package ?Supports5-VVCCOperation ?Maxtpdof3.7nsat3.3V ?LowPowerConsumption,10-μAMaxICC?±24-mAOutputDriveat3.3V ?InputandOpen-DrainOutputAccepts Voltagesupto5.5V ?TypicalVOLP(OutputGroundBounce

STC05IE150HV

Marking：C05IE150HV；Package：TO247-4LHV；Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm

Description TheSTC05IE150HVismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformanceinhighfrequency/highvoltageapplications.itisdesignedforuseinGateDrivenbasedtopologies. Features ■Highvoltage/highcurrentCascodeconfiguration ■Lowequi

STC08DE150HP

Marking：C08DE150HP；Package：TO247-4L；Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm

Description TheSTC08DE150HPismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedatprovidingthebestperformanceinESBTtopology. TheSTC08DE150HPisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Gener

TPE3662BC3

Marking：C06；Package：SOT323；Can bus ESD Protection Diode

Features Ultralowleakage:nAlevel Operatingvoltage:36V Lowclampingvoltage Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5(Lightning)7A(8/20μs) RoHSCompliant

TPS389C0300CRTERQ1

Marking：C030Q；Package：WQFN；TPS389C03-Q1 Multichannel Overvoltage and Undervoltage I2C Programmable Voltage Supervisor and Monitor with Q&A Watchdog

1Features ?ASIL-Dfunctionalsafety-compliant –DocumentationtoaidISO26262systemdesign –SystematiccapabilityuptoASILD –HardwarecapabilityuptoASILD ?AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto+125°C –DeviceHBMESDclassificati

TTC004B

Marking：C004B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

(1)Highcollectorvoltage:VCEO=160V(min) (2)ComplementarytoTTA004B (3)Smallcollectoroutputcapacitance:Cob=12pF(typ.) (4)Hightransitionfrequency:fT=100MHz(typ.)

TTC008

Marking：C008；Package：PW-Mold2；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ?High-SpeedHigh-VoltageSwitching ?SwitchingVoltageRegulators ?High-SpeedDC-DCConverters Features (1)Highcollector-emittervoltage:VCEO=285V,VCES=600V (2)HighDCcurrentgain:hFE=100to200(IC=0.3A) (3)Excellentswitchingtimes:tf=0.1μs(typ.)

TTC011B

Marking：C011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?PowerAmplifiers ?Audio-FrequencyAmplifiers Features (1)Highcollectorvoltage:VCEO=230V(min) (2)Smallcollectoroutputcapacitance:Cob=20pF(typ.) (3)Hightransitionfrequency:fT=100MHz(typ.) (4)ComplementarytoTTA006B

TTC014

Marking：C014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ?High-SpeedHigh-VoltageSwitching ?SwitchingVoltageRegulators ?High-SpeedDC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(IC=0.1A) (2)Highcollectorbreakdownvoltage:VCEO=800V,VCBO=900V (3)High-speedswitching:tr=0.2μs(typ.),