首頁 >BTS742T>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconNPNHighVoltageSwitchingTransistor Features ●Simple-sWitch-OffTransistor(SWOT) ●HIGHSPEEDtechnology ●Planarpassivation ●100kHzswitchingrate ●Verylowswitchinglosses ●Verylowdynamicsaturation ●Verylowoperatingtemperature ●OptimizedRBSOA ●Highreversevoltage Applications Electroniclampballas | Temic TEMIC Semiconductors | Temic | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=400V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.2V(Max)@IC=0.8A APPLICATIONS ·Electroniclampballastcircuits | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNPowerTransistors DESCRIPTION ?WithTO-220Cpackage ?Highvoltagecapability ?Veryhighswitchingspeed APPLICATIONS ?Electronicballastforfluorescent lighting ?Switchmodepowersupplies | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION TheBUL742ismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ■HIGHVOLTAGECAPABILITY ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSP | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
SiliconNPNtransistorinaTO-220PlasticPackage. Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features Highvoltagecapability,highspeedswitching,wideSOA,ROHScompliant. Applications Highfrequencyelectroniclighting,switchingpowersupplyapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR ?Typicalapplication(220Vmainsunlessotherwisespecified) ?Integratedantisaturationandprotectionnetwork ?Accordingtotubeimpedance 120VACmains 277VACmains 340VACmains AsPFC220VACmains SuffixD=Integratedfree-wheelingdiode STpreferredproductsinbol | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?Collector–EmitterBreakdownVoltage :V(BR)CEO=400V(Min.) ?CollectorSaturationVoltage :VCE(sat)=0.2V(Max)@IC=0.8A APPLICATIONS ?Designedforelectroniclampballastcircuitsswitch-mode powersuppliesapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR ?Typicalapplication(220Vmainsunlessotherwisespecified) ?Integratedantisaturationandprotectionnetwork ?Accordingtotubeimpedance 120VACmains 277VACmains 340VACmains AsPFC220VACmains SuffixD=Integratedfree-wheelingdiode STpreferredproductsinbol | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
Highvoltagefast-switching Description ThedeviceismanufacturedusinghighvoltageMulti-EpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.Thankstoanincreasedintermediatelayer,ithasanintrinsicruggednesswhichenablesthetransistortowithstandanhighcollectorcurrentleveldu | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
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