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BTM7751G

智能電機控制IC; ·Quad D-MOS switch driver\n ·Free configurable as bridge or quad-switch\n ·Optimized for DC motor management applications\n ·Low R DS ON High side: 70 mΩ typ. @ 25°C, 180 mΩ max. @ 150°C Low side: 45 mΩ typ. @ 25°C, 105 mΩ max. @ 150°C\n ·Maximum peak current: typ. 14 A @ 25 °C\n ·Very low quiescent current: typ. 5 μA @ 25 °C\n ·Small outline, enhanced power PG-DSO-package\n ·Operates up to 40 V\n ·PWM frequencies up to 1 kHz\n ·Status flag diagnosis\n ·Short-circuit-protection\n ·Overtemperature shut down with hysteresis\n ·Internal clamp diodes\n ·Open load detection in Off-mode\n ·Under-voltage detection with hysteresis\n ·Green Product (RoHS compliant)\n ·AEC Qualified\n;

The BTM7751G is part of the Trilith IC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames. The sources are connected to individual pins, so the BTM7751G can be used in H-bridge- as well as in any other configuration. Both the double high-side and the two low-side switches of the BTM7751G are manufactured in SMART SIPMOS ? technology which combines low R DS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis.

BTM7751G

TrilithIC

BTM7751GXUMA1

Package：28-SOIC（0.295"，7.50mm 寬）；包裝：管件 類別：集成電路（IC） 全半橋驅(qū)動器 描述：IC BRIDGE DRIVER PAR 28DSO

BTS7751G

TrilithIC

Description TheBTS7751GispartoftheTrilithICfamilycontainingthreediesinonepackage: Onedoublehigh-sideswitchandtwolow-sideswitches.ThedrainsofthesethreeverticalDMOSchipsaremountedonseparatedleadframes.Thesourcesareconnectedtoindividualpins,sotheBTS775

EVAL-AD7751EB

EnergyMeteringICWithOn-ChipFaultDetection

GENERALDESCRIPTION TheAD7751isahigh-accuracyfault-tolerantelectricalenergymeasurementICthatisintendedforusewith2-wiredistributionsystems.ThepartspecificationssurpasstheaccuracyrequirementsasquotedintheIEC1036standard. FEATURES HighAccuracy,Supports50

F7751

SAWBandpassFilterF7751

Features ●RFbandpassfilter ●Highattenuation ●Usablebandwidth19MHz ●Nomatching50?single-endedoperation ●CeramicSurfaceMountedDevice(SMD)Package ●RoHSCompliant

IRF7751

PowerMOSFET(Vdss=-30V)

Description HEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanex

IRF7751GPBF

HEXFET?PowerMOSFETUltraLowOn-Resistance

Description HEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanex

IRF7751GTRPBF

DualP-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFETs APPLICATIONS ?LoadSwitch ?BatterySwitch

IRF7751PBF

UltraLowOn-Resistance

Description HEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanex