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SP8510KN

12-BitSamplingA/DConverters

DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu

SipexSipex Corporation

西伯斯西伯斯公司

SP8510KS

12-BitSamplingA/DConverters

DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu

SipexSipex Corporation

西伯斯西伯斯公司

TCP8510

MouldedTypeStraightPlugs

HOSIDEN

Hosiden Corporation

TDA8510

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

TDA8510J

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    BT8510EPJC

  • 功能描述：

    68-pin Plastic Leaded Chip Carrier(PLCC)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
BT
19+
PLCC
22978
詢價(jià)
BT
23+
PLCC-44
17523
詢價(jià)
BT
24+
PLCC-68
2630
詢價(jià)
BT
23+
PLCC
5000
原裝正品,假一罰十
 詢價(jià)
BT
24+
PLCC68
500
詢價(jià)
BT
23+
PLCC
8890
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來(lái)電查詢
 詢價(jià)
BT
24+
PLCC68
21322
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
BT
4
公司優(yōu)勢(shì)庫(kù)存 熱賣中!!
 詢價(jià)
BT
/
PLCC
48
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
BT
23+
PLCC68
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多BT8510EPJC供應(yīng)商 更新時(shí)間2025-7-22 16:04:00

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