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BSC110N15NS5

20V-300V N-Channel Power MOSFET; ? 降低 RDS(on)而不影響 FOMgd和 FOMoss\n? 降低輸出電荷\n? 超低反向恢復(fù)電荷\n? 提高換流堅(jiān)固性\n? 可以提高開關(guān)頻率\n\n優(yōu)勢(shì):\n? 減少并聯(lián)\n? 使用出色的 SuperSO8 縮小尺寸\n? 更高的功率密度設(shè)計(jì)\n? 更堅(jiān)固的產(chǎn)品\n? 降低系統(tǒng)成本\n? 改善電磁干擾行為\n;

英飛凌新推出的 OptiMOS?5 150 V 功率 MOSFET 特別適合叉車和電動(dòng)腳踏車等低壓驅(qū)動(dòng)器以及通信和太陽能應(yīng)用。新產(chǎn)品突破性地降低了 R?DS(on)（與 SuperSO8 中的下一個(gè)理想替代品相比高達(dá) 25％）和 Q?rr，而不影響 FOM?gd?和 FOM?OSS，從而在優(yōu)化系統(tǒng)效率的同時(shí)有效減少設(shè)計(jì)工作量。此外，超低反向恢復(fù)電荷（在 SuperSO8 中，Q?rr?= 26 nC）提高了換流堅(jiān)固性。\n

BSC110N15NS5

Metal Oxide Semiconductor Field Effect Transistor

BSC110N15NS5SC

絲?。?a target="_blank" title="Marking" href="/110n15sc/marking.html">110N15SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 150 V

Features ?Dual-sidecooledpackagewithlowestJunction-topthermalresistance ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchi

BSC110N15NS5SC

OptiMOS? 5 power MOSFETs 150 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance; \n優(yōu)勢(shì):\n? Lower conduction losses and switching losses for higher system efficiency\n? Improved heat dissipation for high power density and improved reliability\n? Superior power handling capability and ruggedness for longer lifetime\n? Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change\n;