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20V-300V N-Channel Power MOSFET; ? 針對同步整流進(jìn)行優(yōu)化\n? R DS(on) 比其他器件低 40%\n? 與同類器件相比，品質(zhì)因數(shù)提高了 40%\n? 符合 RoHS - 無鹵素\n? MSL1 評級\n\n優(yōu)勢:\n? 高系統(tǒng)效率\n? 減少并聯(lián)\n? 增加功率密度\n? 降低系統(tǒng)成本\n? 非常低的電壓過沖\n;

OptiMOS ? 5 60V 針對交換模式電源 (SMPS)中的同步整流進(jìn)行了優(yōu)化，例如服務(wù)器和臺式機(jī)以及平板電腦充電器中的電源。此外，這些器件是電機(jī)控制、太陽能微逆變器和快速開關(guān) 直流-直流轉(zhuǎn)換器等廣泛工業(yè)應(yīng)用的絕佳選擇。\n

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New OptiMOS??40V and 60V

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絲?。?a target="_blank" title="Marking" href="/028n06sc/marking.html">028N06SC；Package：PG-WSON-8；OptiMOSTM Power-Transistor, 60 V

Features ?Dual-sidecooledpackagewithlowestJunction-topthermalresistance ?175°Crated ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-

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OptiMOS? 5 power MOSFET with enhanced temperature rating for improved robustness; ? Low RDS(on) \n? Optimized for synchronous rectification\n? Enhanced 175°C capability in SuperSO8\n\n優(yōu)勢:\n? Longer life time\n? Highest efficiency and power density\n? Highest system reliability\n? Thermal robustness\n?\n;

OptiMOS? 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.\n

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OptiMOS??Power-Transistor

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OptiMOS? SC power MOSFET 60 V in SuperSO8 package with exposed clip for dual-side cooling; \n優(yōu)勢:\nImproved heat dissipation\nSuperior thermal resistance\nDrop-in replacement in designs using SuperSO8 package\nLow conduction and switching losses\n;

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絲印：028N06NS；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V