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KRC853E

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會(huì)社

KRC853U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會(huì)社

KSC853

NPN(LOWFREQUENCYAMPLIFIER)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

MAX853

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853C/D

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853CSLASHD

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853ESA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853ISA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MC853

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號(hào):

    BS-C853RD

  • 功能描述:

    SINGLE DIGIT LED DISPLAYS

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AMERBRIGH
23+
NA
749
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BRI
24+
65230
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BRI
23+
7300
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BRI
23+
7300
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INFINEON/英飛凌
23+
SOP-8
50000
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INFINEON/英飛凌
24+
NA/
5650
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INFINEON
23+
SOP-8
7000
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INFINEON/英飛凌
24+
SOP-8
60000
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infineon/英飛凌
25+
DFN-85X6
770
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VISHAY/威世
24+
DIP6
6618
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更多BS-C853RD供應(yīng)商 更新時(shí)間2025-7-21 17:02:00