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BTA312B

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT404plasticsingle-endedsurface-mountablepackage Features ■Veryhighcommutationperformancemaximizedateachgatesensitivity ■HighimmunitytodV/dt Applications ■Highpowermotorcontrol-e.g.washingm

ETC

BTA312B

12AThree-quadranttriacshighcommutationhightemperature

ETC

BTA312B

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT404plasticsingle-endedsurface-mountablepackage Features ■Sensitivegate ■HighimmunitytodV/dt ■Veryhighcommutationperformancemaximizedateachgatesensitivity Applications ■Highpowermotorcontro

ETC

BTA312X

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT186Afullpackplasticpackage Features ■Veryhighcommutationperformancemaximizedateachgatesensitivity ■HighimmunitytodV/dt ■Highisolationvoltage Applications ■Highpowermotorcontrol-e.g.was

ETC

BTA312X

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT186Afullpackplasticpackage Features ■Veryhighcommutationperformancemaximizedateachgatesensitivity ■HighimmunitytodV/dt ■Highisolationvoltage Applications ■Highpowermotorcontrol-e.g.was

ETC

BTA312Y

12AThree-quadranttriacshighcommutationinsulated

Generaldescription Passivated,newgeneration,highcommutationtriacsinaninternallyinsulatedTO-220plasticpackage Features ■Veryhighcommutationperformance ■HighimmunitytodV/dt ■Isolatedmountingbase ■2500VRMSisolationvoltage Applications ■Motorcontrol-e.g.washin

ETC

BTM312

BluetoothModule

BUL312FH

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideR.B.S.O.A. ■HIGHVOLTAGECAP

BUL312FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUL312FPismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhigh switchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructurewithplanaredge terminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBULseriesisd

BUL312FP

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=500V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=1A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.