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首頁 >BOOSTXL-SHARP128>規(guī)格書列表

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BUL128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd

TGS

Tiger Electronic Co.,Ltd

BUL128D

SiliconNPNPowerTransistor

EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128DB

iscSiliconNPNPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforelectronicballastsforfluorescentlighting.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL128FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULB128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMulti-EpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULB128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    BOOSTXL-SHARP128

  • 制造商：

    Texas Instruments

  • 類別：

    開發(fā)板，套件，編程器 > 評估板 - 擴(kuò)展板，子卡

  • 包裝：

    散裝

  • 平臺：

    LaunchPad?

  • 類型：

    顯示

  • 功能：

    LCD 1.28"

  • 使用的 IC/零件：

    LS013B7DH03

  • 內(nèi)含物：

    板

  • 描述：

    DEVELOPMENT SPECIALIZED

供應(yīng)商型號品牌批號封裝庫存備注價格
TI
21+
開發(fā)板
10000
原裝,品質(zhì)保證,請來電咨詢
 詢價
TI
2021+
開發(fā)板
7600
原裝現(xiàn)貨，歡迎詢價
 詢價
TI
24+
開發(fā)板
30000
原裝正品公司現(xiàn)貨,假一賠十!
 詢價
TI
24+
開發(fā)板
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
TI
2022+
開發(fā)板
7600
原廠原裝,假一罰十
 詢價
TI
21+
開發(fā)板
10000
只做原裝,質(zhì)量保證
 詢價
TI
25+
開發(fā)板
8880
原裝認(rèn)準(zhǔn)芯澤盛世！
 詢價
TI
23+
開發(fā)板
10000
原裝正品，支持實(shí)單
 詢價
TI
21+
開發(fā)板
10000
全新原裝現(xiàn)貨
 詢價
TI
22+
開發(fā)板
10000
原廠原裝現(xiàn)貨
 詢價
更多BOOSTXL-SHARP128供應(yīng)商 更新時間2025-7-9 9:31:00

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