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IRF044

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF044

N-CHANNELPOWERMOSFET

IRF044

RepetitiveAvalancheRatings

IRF044

SimpleDriveRequirements

DESCRIPTION ?DrainCurrentID=44A@TC=25℃ ?DrainSourceVoltage- :VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max) ?SimpleDriveRequirements APPLICATIONS ?Switchingpowersupplies ?Motorcontrols,InvertersandChoppers ?Audioamplifiersandhighen

IRF044SMD

N-CHANNELPOWERMOSFET

IRFM044

60V,N-CHANNEL

IRFM044

SimpleDriveRequirements

IRFMJ044

POWERMOSFETSURFACEMOUNT(D3PAK)

IRFMJ044

SimpleDriveRequirements

IRFN044

POWERMOSFETN-CHANNEL(BVdss=60V,Rds(on)=0.040ohm,Id=44A)

RDS(on)0.04? ID44A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-established