描述 Description

20 W plastic LDMOS power transistor for general purpose applications at frequencies from 400 MHz to 2700 MHz.

特性 Features

? High efficiency
? Excellent ruggedness
? Designed for broadband operation
? Excellent thermal stability
? High power gain
? Integrated ESD protection
? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

應(yīng)用 Application

? Radars & avionics
? Broadcast transmitter applications
? Communications
? Industrial, scientific and medical applications

簡介

BLP0427M9S20G屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的BLP0427M9S20G晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。