General description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

特性 Features

■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a

supply voltage of 28 V and an IDq of 950 mA:

◆ Output power = 30 W (AV)

◆ Gain = 16 dB

◆ Efficiency = 31

◆ IMD3 = ?37 dBc

◆ ACPR = ?40 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (2000 MHz to 2200 MHz)

■ Internally matched for ease of use

Applications

■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2000 MHz to 2200 MHz frequency range.