描述 Description

600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

特性 Features

? Excellent ruggedness
? High efficiency
? Low thermal resistance providing excellent thermal stability
? Lower output capacitance for improved performance in Doherty applications
? Designed for low memory effects and minimum IDq drift providing excellent digital?pre-distortion capability
? Internally matched for ease of use
? Integrated ESD protection
? For RoHS compliance see the product details on the Ampleon website

應用 Application

? RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range

簡介

BLC10G22XS-603AVT屬于分立半導體產品的晶體管-FETMOSFET-射頻。由制造生產的BLC10G22XS-603AVT晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。