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Package：SOT-538A；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 75V 16DB SOT538A

AmpleonAmpleon USA Inc.

安譜隆

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz, 2W Internally Matched Power FET ? 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM ? EIA FEATURES HIGH PAE( 30 TYPICAL) ? EIB FEATURES HIGH IP3(46dBm TYPICAL) ? +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB ? 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：46.76 Kbytes 頁數(shù)：1 Pages

Excelics

Excelics Semiconductor, Inc.

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz, 2W Internally Matched Power FET ? 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM ? EIA FEATURES HIGH PAE( 30 TYPICAL) ? EIB FEATURES HIGH IP3(46dBm TYPICAL) ? +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB ? 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：46.76 Kbytes 頁數(shù)：1 Pages

Excelics

Excelics Semiconductor, Inc.

2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 ? external circuit. To reduce thermal resistance the devic

文件：81.77 Kbytes 頁數(shù)：12 Pages

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

MURATA/村田
SMD

MURATA/村田

上傳：深圳市外芯人半導體有限公司